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P l arameter S s ymbo C s ondition R t ating Uni
C V ollector-to-Base Voltage CBO 1 V 100
C V ollector-to-Emitter Voltage CEO 8 V 00
E V mitter-to-Base Voltage EBO 7 V
C I ollector Current C 3 A
C I ollector Current (Pulse) CP 1 A 0
B I ase Current B 1 A .5
C P ollector Dissipation C 3 W 0
J j unction Temperature T 150
S g torage Temperature Tst –55 to +150
P l arameter S s ymbo Condition
Ratings
Unit
m p in t x y ma
C I ollector Cutoff Current CBO VCB=800V, IE= 0 0 1 Aµ
E I mitter Cutoff Current EBO VEB=5V, IC= 0 0 1 Aµ
DC Current Gain
hFE1 VCE=5V, IC=0.2A 1 * 0* 40
hFE2 VCE=5V, IC=1A 8
G f ain-Bandwidth Product T VCE=10V, IC=0.2A 1 z 5 MH
O C utput Capacitance
ob VCB=10V, f=1MHz 6 F
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